离子束旋转刻蚀工艺误差对均匀照明的影响  

The Influence of Fabrication Error in Ion Beam Rotation Etching on Uniform Illumination

作　　者：徐俊中[1] 赵逸琼[1] 王炜[1] 李永平[1] 徐向东[2] 周洪军[2] 洪义麟[2] 李涛[2] 傅绍军[2] 

机构地区：[1]中国科学技术大学物理系,安徽合肥230026 [2]中国科学技术大学国家同步辐射实验室,安徽合肥230027

出　　处：《光电工程》2001年第6期24-28,共5页Opto-Electronic Engineering

基　　金：国家863-416课题资助项目

摘　　要：介绍一种离子束旋转刻蚀工艺,该工艺可用于制作真正意义上连续位相分布的衍射光学元件。对工艺系统中离子束不均匀度和基片与掩模板中心对准误差对器件性能的影响作了模拟计算,并根据对误差的模拟分析提出了工艺改进方案。An ion beam rotation etching technique used for manufacture of diffractive optical elements with continuous relief structure is introduced in the paper. The simulation calculation for the influence of ion beam non-uniformity in the technological system and the alignment error between substrate and mask center on device properties is carried out. The process improvement scheme is proposed according to the simulation analysis for errors.

关 键 词：旋转刻蚀 误差分析 离子束刻蚀 衍射光学元件 均匀照明 

分 类 号：TN305.7[电子电信—物理电子学]