基于实验与物理分析的4H-SiC射频功率MESFET大信号非线性精确电容模型  

An Accurate Large-Signal Capacitance Model for RF Power Measurement and Physical Analysis on 4H-SiC MESFET

作　　者：杨林安[1] 张义门[1] 张玉明[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2002年第2期188-192,共5页半导体学报（英文版）

基　　金：国防预研基金资助项目 (8.1.7.3 )~~

摘　　要：采用电荷控制理论和载流子速度饱和理论的物理分析方法 ,并结合 Statz、Angelov等经验模型的描述方法 ,提出了常温下针对 4 H- Si C射频功率 MESFET的大信号非线性电容模型 .此模型在低漏源偏压区对栅源电容 Cgs强非线性的描述优于 Statz、Angelov等经验模型 ,计算量也远低于基于器件物理特性的数值模型 。A large signal nonlinear capacitance model for RF power 4H SiC MESFET at room temperature is proposed by combining the physical analysis of devices based on theories of charge controlling and carrier velocity saturation and the description of empirical models such as Statz and Angelov models.This model is superior to Statz and Angelov models in describing the strong nonlinear C gs in the low V ds region,and it has less calculation quantity than that of the numerical models based on physics equations of devices.Thus,it is suitable for design and optimization of large signal circuits.

关 键 词：4H-SIC 射频功率 MESFET 非线性大信号模型 电容模型 

分 类 号：TN386.1[电子电信—物理电子学]