HF/CrO_3溶液对AlGaAs的选择性湿法刻蚀应用于楔型结构的制备  

Selective Wet Etching of HF/CrO_3 Solution on AlGaAs: Application to Vertical Taper Structures

作　　者：黄辉[1] 黄永清[1] 任晓敏[1] 高俊华[2] 罗丽萍[2] 马骁宇[2] 

机构地区：[1]北京邮电大学,北京100876 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2002年第2期208-212,共5页半导体学报（英文版）

基　　金：国家杰出青年基金(批准号 :6962 5 10 1);国家自然基金(批准号 :699760 0 7)资助项目~~

摘　　要：利用动态掩膜腐蚀技术 ,研究了 HF/ Cr O3腐蚀液对各种不同组分的 Alx Ga1 - x As(x =0 .3,0 .5 ,0 .6 5 )的腐蚀速率及腐蚀表面形貌 .随着 HF(48wt% ) / Cr O3(33wt% )的体积比由 0 .0 1变化到 0 .138,相应的腐蚀液对 Al0 .8-Ga0 .2 As/ Al0 .3Ga0 .7As的选择性由 179降到 8.6 ;通过调节腐蚀液的选择性 ,在 Al0 .3Ga0 .7As外延层上制备出了倾角从 0 .32°到 6 .6 1°的各种斜面 .当 HF(48wt% ) / Cr O3(33wt% )的体积比为 0 .0 2 8时 ,Al组分分别为 0 .3、0 .5和 0 .6 5时 ,相应的腐蚀表面的均方根粗糙度为 1.8、9.1和 19.3nm.另外 。The etch rate and surface morphology of Al x Ga 1-x As( x =0 3,0 5,0 65) versus composition of CrO 3/HF solutions are studied by using the dynamic etch mask technique.The selectivity,which is defined as a ratio of the etch rate,decreases from 179 to 8 6 for Al 0 8 Ga 0 2 As/Al 0 3 Ga 0 7 As with the volume ratio of HF(48wt%)/CrO 3(33wt%) increasing from 0 01 to 0 138.The selective etching is applied to the fabrication of the vertical taper structures with angles ranging from 0 32° to 6 61° on Al 0 3 Ga 0 7 As epitaxial layer.The surface roughness on Al x Ga 1-x As( x =0 3,0 5,0 65),which is etched by CrO 3/HF at volume ratio of 0 028,are 1 8,9 1 and 19 3nm respectively.The relation between the etching mechanism and the surface morphology is also discussed.

关 键 词：制备 楔形结构 铝镓砷化物合 选择性湿法刻蚀 HF-CrO3溶液 

分 类 号：TN305.7[电子电信—物理电子学]