Si衬底上横向外延GaN材料的微结构和光学性质的研究  

Study of Microstructure and Optical Properties of Epitaxial Laterally Overgrown GaN Films on Si (III) Substrate

作　　者：汪峰[1] 张荣[1] 陈志忠[1] 朱健民[1] 顾书林[1] 沈波[1] 李卫平[1] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《高技术通讯》2002年第3期47-49,共3页Chinese High Technology Letters

基　　金：国家重点基础研究专项(G20000683);国家杰出青年科学研究基金(60025411);国家自然科学基金(69976014,69636010,69806006,69987001);863计划(863307123(05),8637150010220,8637150110031)资助项目

摘　　要：用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。透射电子显微镜 (TEM )的研究结果表明 ,横向外延区域GaN的位错密度明显减小。由于SiO2 掩膜腐蚀角的不同 (分别为 90°和 6 6°) ,导致了横向外延GaN材料一些独特的微观形貌。微区拉曼光谱由数百条拉曼散射曲线组成 ,每一条曲线有三个振动模 ,分别对应Si振动模式 (5 2 0cm- 1) ,E2 模式 (5 6 6cm- 1)和E1(LO)模式(732cm- 1)。在垂直条纹方向 ,峰位和峰宽没有明显的变化 ,而峰强约 5The microstructure and optical properties of epitaxial laterally overgrown (ELO) GaN films on Si (III) substrate by hydrade vapor phase epitaxy (HVPE) have been investigated. Cross-sectional TEM reveals that the threading dislocation (TD) density in the ELO-GaN region is significantly reduced. Different etching angles of the two sidewalls of the SiO 2 mask (90°and 66°, respectively) lead to the distinctive microstructure of the ELO GaN. Three vibration modes, which are Si vibration mode (520cm -1), GaN E 2 (566cm -1) mode and E 1 (LO) (732cm -1) mode, have been detected in several hundred raman scattering curves. Along the direction perpendicular to mask stripes, the position and linewidth of these modes do not change while the intensity varies periodically about 5μm.

关 键 词：微结构和光学性质 HVPE横向外延GaN Si(III)衬底 

分 类 号：TN304.055[电子电信—物理电子学]