射频溅射FeTaN纳米晶软磁薄膜结构和磁性  

Microstrucrure and magnetic properties of RF-sputtered nanocrystalline FeTaN soft magnetic thin films

作　　者：郑代顺[1] 谢天[1] 白建民[1] 魏福林[1] 杨正[1] 

机构地区：[1]兰州大学磁性材料研究所,兰州730000

出　　处：《物理学报》2002年第4期908-912,共5页Acta Physica Sinica

摘　　要：用射频反应溅射制备了FeTaN纳米晶软磁薄膜 .研究了薄膜结构和磁性与制备条件的依赖关系 .研究发现 ,当Ta的含量较高时 ,在N2 +Ar混合气氛中易形成沉积态薄膜的非晶结构 .适当的热处理后 ,α Fe纳米晶从中晶化生成 .The nanocrystalline FeTaN soft magnetic thin films were prepared by RF-reactive sputtering, and their microstructure and magnetic properties were investigated. It is found that the as-deposited films would be amorphous if the concentration of Ta is high in the films. After proper annealing, the nanocrystalline of alpha-Fe crystallizes from the amorphous matrix, and the films exhibit excellent soft magnetic properties.

关 键 词：纳米晶 软磁性 非晶态 射频溅射 结构 磁性 FETAN 

分 类 号：O484[理学—固体物理]