等离子体增强反应蒸发沉积的氟掺杂氧化铟薄膜的性质  

Study on fluorine-doped indium oxide films deposited by plasma enhanced evaporating

作　　者：程珊华[1] 宁兆元[1] 黄峰[1] 

机构地区：[1]苏州大学物理系,苏州215006

出　　处：《物理学报》2002年第3期668-673,共6页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :10 175 048)资助的课题~~

摘　　要：采用直流辉光CF4 O2 等离子体增强反应蒸发方法沉积了氟掺杂氧化铟透明导电薄膜 ,经过真空退火处理薄膜的电阻率达到 1 8× 10 - 3 Ω·cm ,透光率高于 80 %.研究了掺氟量和退火温度对薄膜电阻率和透光率的影响 ,结果表明 :氟的掺入增加了载流子浓度 ,使得薄膜的电阻率明显下降 ,而薄膜的透光率变差 ,但是可以通过真空退火处理使其得到显著的改善 ,掺氟量越大需要的退火温度越高 .X射线衍射分析说明 ,氟的掺入使薄膜的无序度增加 ;退火处理提高了薄膜的结晶状况 ,改善了薄膜的透光性能 ,同时也没有增加薄膜的电阻率 .Fluorine-doped In 2O 3 films were deposited by plasma enhanced evaporating using CF 4/O 2 mixture. The films showed a resistivity of 1.8×10 -3Ω·cm, and a transmittance of higher than 80% in visible range after vacuum annealing. In this paper, the effects of CF 4/O 2 flow rate and annealing temperature on resistivity and transmittance of the films have been investigated. The results show that the resistivity of the fluorine-doped film significantly decreased, and the transmittance became lower. But it can be improved by annealing. Higher fluorine-doped films need be annealed at higher temperatures. X-ray diffraction analysis of the films shows that the increase of the film transmittance is due to improving crystallinity by annealing.

关 键 词：透明导电薄膜 氟掺杂 等离子体增强反应蒸发沉积 氧化铟薄膜 导电性能 光学性能 

分 类 号：O484.4[理学—固体物理]