近室温工作的中长波InAsSb探测器  

InAsSb photodetectors with long wavelength operating at near room temperature

作　　者：高玉竹[1] 赵子瑞 龚秀英[1] 魏小梅 冯彦斌 司俊杰 GAO Yu-zhu;ZHAO Zi-rui;GONG Xiu-ying;WEI Xiao-mei;FENG Yan-bin;SI Jun-jie(College of Electronics and Information Engineering,Tongji University,Shanghai 201804,China;Hnaxing Infrared Devices Company,Xian 712099,China;3.China Air-bome Missile Academy,Luoyang 471000,China)

机构地区：[1]同济大学电子与信息工程学院,上海201804 [2]陕西华星红外器件公司,西安712099 [3]中国空-空导弹研究院,洛阳471000

出　　处：《光电子．激光》2018年第12期1266-1269,共4页Journal of Optoelectronics·Laser

基　　金：军工科研资助项目

摘　　要：用熔体外延法(melt epitaxy),在砷化铟(InAs)衬底上,制备了长波铟砷锑(InAs0.05Sb0.95)厚膜单晶。熔体外延法,是一种改进的液相外延法(LPE)。用扫描电子显微镜(SEM)观察了样品的横截面,测量出外延层的厚度达到150μm,这个厚度有效地抑制了外延层与衬底之间晶格失配的影响。制作了近室温工作的中长波铟砷锑探测器,是光导型器件,安装了半导体制冷器。250K下,光谱响应的波长范围为2-11μm,峰值响应率为153.7V/W,加装锗(Ge)场镜后,峰值响应率提高到1 912.6V/W,指示了在红外探测领域的应用前途。InAs0.05Sb0.95 thick epilayers with long wavelength were grown on InAs substrates using melt epitaxy (ME).ME is an improved liquid phase epitaxy (LPE)method.The cross section of InAsSb samples was observed by scanning electron microscopy (SEM).The thickness of the epilayers reaches 150μm.This thickness effectively suppresses the influence of the lattice mismatch between the epilayers and substrates.InAsSb photodetectors with long wavelength operating at near room temperature were fabricated.The detectors are photoconductors with TE coolers.At 250K,the photoresponse wavelength range is 2-11μm.The peak responsivity is 153.7V/W,which has been enhanced to 1912.6V/W by installing Ge flied lens,indicating application prospects for infrared detection.

关 键 词：INASSB 近室温工作 光谱响应 峰值响应率 

分 类 号：O612.5[理学—无机化学]