电弧离子镀沉积工艺参数的影响  

Effect of deposition process parameters on arc ion plating

作　　者：赵彦辉[1] 史文博[1] 刘忠海[1] 刘占奇 于宝海[1] ZHAO Yan-hui;SHI Wen-bo;LIU Zhong-hai;LIU Zhan-qi;YU Bao-hai(Institute of Metal Research,Chinese Academy of Sciences,Shenyang 100016,China)

机构地区：[1]中国科学院金属研究所,辽宁沈阳110016

出　　处：《真空》2018年第6期49-59,共11页Vacuum

摘　　要：电弧离子镀是真空镀膜技术中最常用的技术之一,目前在科学研究及工业生产中都得到了长足发展。但是在薄膜沉积过程中的工艺参数如弧电流、沉积气压、沉积温度等对薄膜结构及性能的影响多分散于不同的文献中,不利于对这些参数的认识与深入理解。本文综述了电弧离子镀中的工艺参数的作用,这些参数包括弧电流、弧电压、沉积气压、靶基距、基体偏压、沉积温度及外加磁场等。通过对薄膜沉积过程中工艺参数的总结,可加深这些参数对薄膜结构及性能影响规律的理解,促进真空镀膜技术的工艺开发及技术进步。Arc ion plating is one of the most commonly used technique in vacuum film depsition technology,a long-term development in the fields of scientific research and industrial production have been obtained in present.However,the effects of some process parameters including arc current,deposition pressure,deposition temperature,etc.on film structure and properties were often scattered in different literatures during film deposition,being not conducive to the deep understanding of these parameters.This present paper reviews the role of the process parameters including arc current,deposition pressure,target- substrate distance,substrate bias,deposition temperature and external magnetic field,etc.It can be deeply recognized for the roles of these parameters on film structure and properties,through the summary of these process parameters during film deposition, which promotes the process development and progress of vacuum film deposition technology.

关 键 词：电弧离子镀 弧电流 沉积气压 基体偏压 沉积温度 

分 类 号：TB43[一般工业技术]