磨料对硒化锌雾化施液化学机械抛光的影响  

Effect of Abrasive on Ultrasound Fine Atomization CMP of Zinc Selenide

作　　者：李庆忠 施卫彬 夏明光 LI Qingzhong;SHI Weibin;XIA Mingguang(School of Mechanical Engin.,Jiangnan University,Wuxi 214122,CHN)

机构地区：[1]江南大学机械工程学院,江苏无锡214122

出　　处：《半导体光电》2018年第6期815-818,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(51175228)

摘　　要：采用雾化施液化学机械抛光(CMP)的方法,以材料去除速率和表面粗糙度为评价指标,选取最适合硒化锌抛光的磨料,通过单因素实验对比CeO_2、SiO_2和Al_2O_3三种磨料的抛光效果。结果显示:采用Al_2O_3抛光液可以获得最高的材料去除率,为615.19nm/min,而CeO_2和SiO_2磨料的材料去除率分别只有184.92和78.56nm/min。进一步分析磨料粒径对实验结果的影响规律,表明100nm Al_2O_3抛光后的表面质量最佳,粗糙度Ra仅为2.51nm,300nm Al_2O_3的去除速率最大,达到1 256.5nm/min,但表面存在严重缺陷,出现明显划痕和蚀坑。在相同工况条件下,与传统化学机械抛光相比,精细雾化抛光的去除速率和表面粗糙度与传统抛光相近,但所用抛光液量约为传统抛光的1/8,大大提高了抛光液的利用率。Taking the material removal rate(MRR)and surface roughness(Ra)as the assessment indexes, the most suitable abrasive for polishing zinc selenide was selected with the method of ultrasonic atomization CMP. By single factor experiments on three abrasives of CeO2, SiO2 and Al2O3, it was found that Al2O3 abrasive obtained the highest removal rate of up to 615.19nm/min, while the removal rate of CeO2 and SiO2 abrasives were only 184.92 and 78.56nm/min, respectively. Furthermore, the influence of abrasive sizes on the experimental results was analyzed. It showed the surface quality after 100nm Al2O3 polishing was best(Ra=2.51nm), while the removal rate after 300nm Al2O3 polishing was the highest(MRR=1256.5nm/min), but the surface presented obvious scratches and pits. At the same conditions, the removal rate and surface roughness of fine atomization polishing were similar with those of traditional polishing, but the consumed quantity of polishing liquid is only 1/8, greatly improving the utilization rate of slurry.

关 键 词：硒化锌 雾化施液 化学机械抛光 磨料 去除速率 表面粗糙度 

分 类 号：TN305.2[电子电信—物理电子学]