带有固定延迟时间的IGBT去饱和过流检测电路  

IGBT DESAT Overcurrent Detection Circuit with Fixed Delay Time

作　　者：徐超 吴灯鹏 徐大伟[1,3] 朱弘月 俞跃辉 程新红[1,3] Xu Chao;Wu Dengpeng;Xu Dawei;Zhu Hongyue;Yu Yuehui;Cheng Xinhong(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-System and Information Technology,Chinese Academy of Science,Shanghai 200050,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;University of Chinese Academy of Science,Beijing 100049)

机构地区：[1]中国科学院上海微系统与信息技术研究所信息与功能材料重点实验室,上海200050 [2]上海科技大学物质学院,上海201210 [3]中国科学院大学,北京100049

出　　处：《半导体技术》2019年第1期65-72,共8页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2016YFB0100700)

摘　　要：提出了一款带有固定延迟时间的绝缘栅双极型晶体管(IGBT)去饱和(DESAT)过流检测电路。在IGBT去饱和过流检测电路中加入固定延时电路,当检测到过流信号后关断IGBT,防止IGBT被烧毁。同时固定延时电路开始计时,经历了固定延迟时间后,电路错误信号清除,IGBT恢复正常工作状态,提高了IGBT功率回路的可靠性与安全性。将固定延时电路集成在IGBT驱动芯片中,提高了系统的集成度。采用UMC 0.6μm高压BCD工艺模型对去饱和过流检测电路进行前仿和后仿。仿真结果表明,采用线性温度补偿方法,基准电路的过流阈值电压典型值为6.97 V,温度系数为19.5×10^(-6)/℃。IGBT开启后消隐时间为920 ns。在不同工艺角仿真中,后仿固定延迟时间在2.8~4 ms之间变化,典型值为3.3 ms,使功率回路储能元件中的冗余能量充分释放。An insulated gate bipolar transistor(IGBT) desaturation(DESAT) overcurrent detection circuit with fixed delay time was proposed.A fixed delay time circuit was added into the IGBT DESAT overcurrent detection circuit.When the overcurrent signal was detected,it was turned off immediately to prevent it from being burned out.At the same time,the fixed delay time circuit started timing.After fixed delay time,the error signal was cleared and the IGBT returned to normal operation status.The reliability and safety of the IGBT power circuit were improved.The integration of the system was increased with adding the fixed delay time circuit into the IGBT drive chip.The UMC 0.6 μm HV BCD process model was used for the pre-and post-simulation of the DESAT overcurrent detection circuit.The simulation results show that the typical overcurrent threshold voltage of reference circuit is 6.97 V and the temperature coefficient is 19.5×10-6/℃ with linear temperature compensation.After the IGBT is turned on,the blan-king time is 920 ns.The post-imitation fixed delay time changes from 2.8 ms to 4 ms in different corners and the typical value is 3.3 ms.The redundant energy in power circuit storage elements is fully released.

关 键 词：固定延迟时间 去饱和(DESAT)过流保护 绝缘栅双极型晶体管(IGBT) 安全性 集成度 

分 类 号：TN322.8[电子电信—物理电子学] IN453