功率MOSFET关键参数的分析研究  

作　　者：贺瑞 

机构地区：[1]西安卫光科技有限公司,陕西西安710065

出　　处：《科学技术创新》2019年第2期9-10,共2页Scientific and Technological Innovation

摘　　要：功率MOSFET因其输入阻抗大、开关速率快、工作频率高以及丰富的封装形式、较大的电压及导通电阻选择范围等优势,广泛应用于电源、通信等不同类型的电力电子变换电路。但功率MOSFET并非完美的开关器件,温度敏感的特征决定使用者必须考虑其热效应对器件性能的影响。本文基于功率MOSFET安全工作区分析了关键参数的特点,阐述了寄生电容及热阻特性,研究了温度对相关参数的影响。Power MOSFET has the advantages of large input impedance,fast switching speed,high working frequency,various packaging forms,large voltage and current selection ranges.It is widely used in power supply and communication and other different types of power electronic conversion circuits.Power MOSFET is not a perfect device,the characteristic of temperature sensitive determines that the influence of its thermal effect on the device performance must be considered.This paper analyzes the characteristics of parameters based on its safe operation area,expounds the parasitic capacitance and thermal resistance characteristics,and studies the influence of temperature on related parameters.

关 键 词：功率MOSFET 安全工作区 导通电阻 寄生电容 瞬态热阻 

分 类 号：TN386[电子电信—物理电子学]