逆导型IGBT发展综述  

Latest Developments of Reverse-conducting IGBT

作　　者：刘志红 汤艺 盛况[1] LIU Zhihong;TANG Yi;SHENG Kuang(College of Electrical Engineering,Zhejiang University,Hangzhou 310027,Zhejiang Province,China;Star Power Semiconductor Ltd.,Jiaxing 314006,Zhejiang Province,China)

机构地区：[1]浙江大学电气工程学院,浙江省杭州市310027 [2]嘉兴斯达半导体股份有限公司,浙江省嘉兴市314006

出　　处：《中国电机工程学报》2019年第2期550-561,共12页Proceedings of the CSEE

基　　金：上海市科委科研计划项目(18511105100)~~

摘　　要：该文概述垂直型RC-IGBT自发明以来的主要发展和当前的主要研究问题,包括:IGBT正向输出特性的Snap-back抑制、RC-IGBT关断及二极管反向恢复动态波形优化、器件纵向漂移区载流子浓度分布优化、器件横向载流子密度及电场分布均匀性优化、器件工作时的温度特性、工艺问题及器件仿真问题等。文中同时简要介绍ABB、英飞凌、三菱及富士推出的最新一代逆导型IGBT器件的器件特性及结构特征。The progress of vertical RC-IGBT and main research challenges were reviewed. We discussed snap-back suppressing during IGBT forward conduction, optimization of IGBT turn-off and diode reverse recovery waveforms, tailoring of vertical & lateral carrier profile, and electric field distribution, high temperature characteristics, as well as process and simulation issues. We also briefly introduced the latest RC-IGBT developments from leading power semiconductor companies, reviewing their novel device structures and key characteristics.

关 键 词：逆导型IGBT RC—IGBT 回跳 反向恢复 载流子分布 

分 类 号：TM46[电气工程—电器]