一种新型存储器测试辅助分析方法  

A New Type of Memory Test Aided Analysis Method

作　　者：顾昌山 张立军[1] 郑坚斌 彭增发 于跃 GU Chang-shan;ZHANG Li-jun;ZHENG Jian-bin;PENG Zeng-fa;YU Yue(Soochow University,Suzhou 215006,China;Suzhou Megacores Technology Company Limited,Suzhou 215006,China)

机构地区：[1]苏州大学,江苏苏州215006 [2]苏州兆芯半导体科技有限公司,江苏苏州215006

出　　处：《微电子学与计算机》2019年第2期93-96,共4页Microelectronics & Computer

摘　　要：为了解决存储器测试数据映射到失效存储单元效率较低且精确度不够的问题,本文提出一种存储器测试辅助分析的方法:首先通过修改存储器编译器(memory compiler),使其自动生成存储阵列版图的物理坐标文件(bitmap).然后将测试得到的存储单元的失效信息在已生成的坐标文件中进行寻址,找出被测试失效单元位于版图中的具体物理坐标.最后通过得到的坐标信息自动输出该失效存储单元的译码信息及该存储单元位于整个存储阵列中的物理坐标二维图像.In order to solve the problem that the memory test data is mapped to specific failed cells with low efficiency and insufficient precision,this paper proposes a memory test-assisted analysis method.Firstly,the memory compiler will automatically generate the physical coordinate file of the storage array map after modifying it.Then the failure information of the storage unit is addressed in the generated coordinate file to find out the physical coordinates of the failure storage unit in the map.Finally,through the information of coordinate,the decoding information of the failed storage unit will be automatically output,as well as the physical coordinate two-dimensional image(of the failed storage unit)located in the entire storage array.

关 键 词：存储器 失效存储单元 版图坐标文件 寻址 坐标二维图像 

分 类 号：TN492[电子电信—微电子学与固体电子学]