溅射气压和沉积时间对c-BN薄膜结构的影响  

Dependence of c-BN film structure on working pressure and growth time

作　　者：王波[1] 王玫[1] 张德学[1] 黄安平[1] 宋雪梅[1] 邹云娟[1] 严辉[1] 

机构地区：[1]北京工业大学材料科学与工程学院新型功能材料教育部重点实验室,北京100022

出　　处：《功能材料》2002年第1期82-83,共2页Journal of Functional Materials

基　　金：北京市科技新星计划;北京市自然科学基金资助项目(2992002)

摘　　要：采用磁控反应溅射方法，在Ｓｉ（１００）衬底上沉积ｃＢＮ薄膜，研究了溅射气压和沉积时间对薄膜结构的影响。结果表明，随溅射气压的升高或沉积时间的增加，都是削弱荷能粒子对衬底表面的轰击效果，并导致薄膜中ｃＢＮ相含量的减小。The cubic boron nitride (c-BN) films were deposited on Si (100) wefers with magnetron reactive sputtering. The infrared absorption results indicated that the ratio of c-BN phase to h-BN phase in the films decreases with increasing the working pressure or growth time, which is attributed to the change in the bombardment effect of energetic ions during the deposition process.

关 键 词：立方氮化硼 薄膜 红外光谱 结构 溅射气压 沉积时间 

分 类 号：TN304.23[电子电信—物理电子学] O484.1[理学—固体物理]