自由电子能带中的平均键能与费米能级  

Average-bond-energy and Fermi Level on Free Electronic Band

作　　者：李书平[1] 王仁智[1] 郑永梅[1] 蔡淑惠[1] 何国敏[1] 

机构地区：[1]厦门大学物理学系,361005

出　　处：《固体电子学研究与进展》2002年第1期1-4,共4页Research & Progress of SSE

基　　金：高校博士点基金 (95 3 840 9);福建省自然科学基金 (E990 0 0 5 )资助项目

摘　　要：根据半导体自由电子能带模型 ,文中在面心立方 (fcc)晶体、体心立方 (bcc)晶体和 6角密堆积 (hcp)晶体中研究自由电子能带的平均键能 Em 和费米能级 EF 的关系 ,并得出自由电子能带的平均键能 Em 相当于费米能级 EF 的研究结果。其结果有助于了解平均键能 Em 的物理实质 ,同时也为自由电子系统提供一种通过自由电子能带计算费米能级 EF(或费米半径 k F)Based on the free electronic band model, we study the relationship between average bond energy E m and Fermi level E F in face centered cubic (fcc) crystal, body centered cubic (bcc) crystal and hexagonal closed packed structure (hcp) crystal. It is concluded that the average bond energy E m is equivalent to the Fermi level E F on free electronic band. The results may help to understand the physical conception of average bond energy E m and also supply a method to calculate the Fermi level E F or Fermi radius k F by electronic band calculation for free electronic system.

关 键 词：费米能级 平均键能 异质结 自由电子能带 

分 类 号：O471.5[理学—半导体物理]