Mo_2C膜电阻率的研究  

Research on the Mo_2c film's Resistivity

作　　者：刘俊[1] 马小娟[1] 郑瑞伦[1] 

机构地区：[1]西南师范大学物理系,重庆400715

出　　处：《西南师范大学学报（自然科学版）》2002年第2期170-173,共4页Journal of Southwest China Normal University(Natural Science Edition)

摘　　要：介绍了Mo2 C膜的制备过程和对其电阻率的测量结果 ,探索了其导电机理以及沉积时间、基底温度和生长过程对电阻率的影响 .利用Gibbs函数极小的原理探索了膜中Mo原子的含量随温度的变化规律 ,并对电阻率随温度的变化规律给予了解释 .结果表明 :它的电阻率取决于生长过程和Mo原子的含量 ;电阻率随基底温度。Introduce how to prepare Mo 2C-film and the surveying result of its resistivity. Probe why it conducts electricity and How the deposit time, basal temperature and growth processinfluence its resistivity. The result shows: its resistivity is based on its growth process and the Mo atoms content in it; When the deposit time is 10min,the change of Mo2C-film's resistivity is not linear with basal temperature and if the basal temperature is 500℃,the resistivity has minimum .When the basal temperature is 500℃,the change of the Mo 2C-film's resistivity is not linear with deposit time and if the deposit time is 3min and 12min,the resistivity has the least value and the great value.With the film's minimum of it's free energy,probe how the Mo atoms content of the Mo 2C film changes with the basal temperature and answer why its resistivity changes with the basal temperature.

关 键 词：MO2C膜 电阻率 四探针法 沉积时间 基底温度 碳化钼膜 

分 类 号：O484.42[理学—固体物理]