提高FEA电子发射可靠性和均匀性的几种结构  

Structures to Improve the Reliability and Uniformity of FEA

作　　者：范忠[1] 李琼[1] 徐静芳[1] 郭方敏[1] 茅东升[2] 

机构地区：[1]华东师范大学电子科学技术系,上海200062 [2]中科院上海冶金所离子束开放实验室,上海200050

出　　处：《微细加工技术》2002年第1期76-86,70,共12页Microfabrication Technology

基　　金：国家自然科学基金资助项目 (6 96 710 11)

摘　　要：首先介绍了稳定FEA电子发射均匀性和可靠性的几种结构 ,然后提出了以离子注入和干法刻蚀技术 ,在常规电阻率P型衬底上制成具有串联电阻负反馈特性的单片硅FEA。这些设计和工艺可供研究人员在设计具体FEA电子源的不同应用领域 ,如平版显示器、微波真空器件。Several structures to improve the reliability and uniformity of FEA are presented. Then it was suggested that Si FEA with a series resistor feedback be fabricated on the P type substrate of common resistivity by the N ion implantation and dry etching.The methods described here can be used as a reference when applying FEA to different areas as an electron source,such as flat panel display, microwave vacuum devices, micro vacuum sensors and so on.

关 键 词：FEA 电子发射 可靠性 均匀性 结构 

分 类 号：TN303[电子电信—物理电子学]