A Novel Lateral Solenoidal On-Chip Integrated Inductor Implemented in Conventional Si Process  

新颖的常规硅工艺实现的侧向螺线型片上集成电感(英文)

作　　者：刘畅[1] 陈学良[1] 严金龙[1] 顾伟东[2] 

机构地区：[1]中国科学院上海冶金研究所微电子学分部,上海200233 [2]华为公司上海研究所,上海200233

出　　处：《Journal of Semiconductors》2002年第4期352-365,共14页半导体学报（英文版）

摘　　要：A new structure of the on- chip integrated inductors im plem ented in conventional Si process is presented as a lateral solenoid.The fabrication process utilizes a conventional Si technology with standard double- layer m etal- lization.S param eters of the inductors based equivalent circuit are investigated and the inductor parameters are cal- culated from the m easured data.Experimental results are presented on an integrated inductors fabricated in a lateral solenoid type utilizing double m etal layers rather than a single metal layer as used in conventional planar spiral de- vices.Inductors with peak Q of 1.3and inductance value of 2 .2 n H are presented,which are com parable to conven- tional planar spiral inductors.提出了一种用常规硅工艺实现的片上集成电感的螺线型新结构 .制造工艺使用标准双层金属布线的常规硅工艺 .测量了螺线型集成电感的 S参数 ,从测量数据计算了集成电感的参量 .实验的侧向螺线型片上集成电感的 Q值峰值为 1.3,电感量为 2 .2 n H.对用两层金属层实现的侧向螺线型片上集成电感和单层金属的常规平面螺旋电感的实验结果进行了比较 ,电感量和

关 键 词：integrated inductor solenoidal inductor spiral inductor quality factor 

分 类 号：TN405[电子电信—微电子学与固体电子学]