使用超声搅拌实现精密KOH各向异性体硅腐蚀  

Precision Bulk Micromachining Based on KOH Anisotropic Etching Using Ultrasonic Agitation

作　　者：陈兢[1] 刘理天[1] 李志坚[1] 谭智敏[1] 蒋前哨 方华军[1] 徐扬[1] 刘燕翔[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2002年第4期362-366,共5页半导体学报（英文版）

摘　　要：对使用超声搅拌和不加搅拌时 (10 0 )单晶硅的腐蚀特性进行了研究和对比 .使用超声搅拌 ,可以得到光滑的、无小丘的腐蚀表面 ,整个硅片腐蚀深度的误差不超过 1μm.实验结果表明 ,该方法可以有效地实现精密Ultrasonic agitation is introduced to reduce the surface roughness and im prove the etching uniform ity in the process of m ost comm only used KOH anisotropic etching.Etching characteristics of(10 0 ) Si are studied and compared with that without agitation source.Smooth pyramid- free surfaces are obtained with the uniform etching depth within the resolution of1μm on the same wafer being achieved at the same time.The results reveal that the ultrasonic agitation is a very efficient approach for high precision bulk micromachining.

关 键 词：各向异性腐蚀 超声搅拌 KOH 硅 表面粗糙度 均匀性 

分 类 号：TN305.2[电子电信—物理电子学]