窄条宽MOCVD选区生长InP系材料的速率增强因子  

Growth Rate Enhancement Factor for In P-Based Materials Narrow-Stripe Selective Area Metal-Organic Chemistry Vapor Deposition

作　　者：张瑞英[1] 董杰[1] 周帆[1] 冯志伟[1] 边静[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所国家光电子工艺中心,北京100083

出　　处：《Journal of Semiconductors》2002年第4期399-402,共4页半导体学报（英文版）

基　　金：国家 973计划资助项目 ( No.G2 0 0 0 0 6 83-1)~~

摘　　要：报道了窄条宽选区生长有机金属化学气相沉积 (NSAG- MOCVD)成功生长的 In P系材料 ,并提出在 NSAG-MOCVD生长研究中 ,引入填充因子的必要性 ,给出速率增强因子随填充因子变化的经验公式 ,计算得出速率增强因子随填充因子的变化关系 .与实验结果作了比较 ,发现 In P的速率增强因子主要取决于掩膜宽度 ,In Ga As P的速率增强因子不仅与掩膜宽度有关 ,同时也依赖于生长厚度 。It is the first time that the high quality In P- based materials are successfully grown by use of NSAG- MOCVD tech- nology in China,and that the empirical form ula about the growth rate enhancement factor is proposed.The calculation results in terms of this form ula coincide with experim ental data basically.The growth rate enhancement factor for In Ga As P is depen- dent on both dielectric m ask width and the growth thickness (time) .The wider the dielectric mask,the stronger the depen- dence of growth rate enhancement factor on the growth thickness (tim e) .So it is necessary for In Ga As P to induce the filling factor to describe the relationship between the growth rate enhancem ent factor and patterned substrate.However,for In P,it seem s irrelevant with the growth rate and it is enough to only use the m ask width to express the relationship between the growth rate enhancem ent factor and patterned substrate.

关 键 词：窄条宽选区生长 MOCVD 磷化铟系材料 速率增强因子 

分 类 号：TN304.055[电子电信—物理电子学]