高性能In_(0.53)Ga_(0.47)AsPIN光电探测器的研制  

Fabrication of high performance In_(0.53)Ga_(0.47)As PIN photodectors

作　　者：刘家洲[1] 陈意桥[1] 税琼 南矿军 李爱珍[1] 张永刚[1] 

机构地区：[1]中国科学院上海冶金研究所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2002年第1期45-48,共4页Journal of Functional Materials and Devices

基　　金：国家重点基础研究专项经费G20000683资助课题

摘　　要：报道了采用GSMBE方法研制的In0.53Ga0.47AsPIN光电探测器,器件结构中引入了宽禁带InP窗口层和聚酰亚胺钝化工艺,减小了暗电流,提高了器件性能。在反向偏压为5V时器件的暗电流为640pA,反向偏压为10V时测得器件的上升时间为37.2ps,下降时间为30.45ps,半高宽为43.9ps。对影响探测器暗电流的因素和提高响应速度的途径进行了讨论。The fabrication of In0.53Ga0.47As PIN photodetectors grown by gas source molecular beam epitaxy was reported. Wide band gap InP cap layer and polyimide passivation film were adopted to decrease the dark current and improve the performance of the photodetectors. Lower dark current at 5V reversed bias was measured to be 640pA. At 10V reversed bias, the photodetectors showed rise time of 37.2 ps and fall time of 30.45 ps, with FWHM of 43.9ps. The mechanism of the dark current as well as the way to improve the response speed of the photodetectors were discussed.

关 键 词：光电探测器 分子束外延 PIN二极管 光纤通信 GSMBE 宽禁带半导体 镓砷铟化合物 

分 类 号：TN312.4[电子电信—物理电子学] TN304.26