RF反应溅射法制备高度取向生长的透明多晶ZnO薄膜  

Highly oriented and transparent polycrystalline ZnO films prepared by RF actively sputtering technique

作　　者：龚恒翔[1] 王印月[1] 方泽波[1] 徐大印[1] 杨映虎[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《兰州大学学报（自然科学版）》2002年第2期48-51,共4页Journal of Lanzhou University(Natural Sciences)

基　　金：甘肃省自然科学基金资助项目 (ZS0 11- A2 5 - 0 5 0 - C)

摘　　要：采用 RF反应溅射法在普通玻璃衬底上制备了具有良好 c轴取向性的透明多晶 Zn O薄膜 .由 X射线衍射技术 (XRD)分析了样品结构与沉积条件的关系 .溅射气体中 O2 分压比 R(PO2 /PAr)和衬底温度 Ts 对 Zn O薄膜的结构有显著和相似的影响 ,达到最佳点之前 ,这两个参数与Zn O薄膜质量是正相关的 ,随后薄膜质量随 R和 Ts 的增大而急剧下降 .在最佳沉积条件下得到的样品 XRD谱中只有 (0 0 2 )一个衍射峰 ,此衍射峰半高宽 (FWHM)仅为 0 .2 0°,由此计算得到晶粒大小为 4 2 .8nm.同时还发现所有薄膜中都有垂直于 c轴的压应变存在 ,并且随着衬底温度的升高而减小 .由薄膜折射率数据计算得到的薄膜堆积密度达到 97% ,在 30 0～ 10 0 0 nm波长范围内样品的平均透过率达到 92 % 。Highly oriented and transparent polycrystalline ZnO films have been prepared by RF actively sputtering technique on normal glass wafer. X-ray diffraction technique (XRD) was employed to analyze the effects of the pressure ratio of O 2 to the total pressure, R(P O 2/P Ar), and substrate temperature T s on structure of the films. With the increase of the parameters, R and T s up to the critical point, the films structure properties are optimized. Under the optimized conditions(R=40%,T s=400℃), only ZnO(002) peak is in XRD spectrum and the full width at half maximum(FWHM) is 0.20°, with the largest grain size of films calculated reaching 42.8 nm. The average transmission in the wavelength ranging from 300 nm to 1 000 nm is about 92%.The packing density of 97% evaluated in the light of refractive index measured by ellipsometer indicates that the optimal sample is of good optical quality.

关 键 词：RF反应溅射法 制备 取向生长 透明多晶ZnO薄膜 透过率 折射率 半导体薄膜 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055