双极晶体管发射极电流集边效应理论及其在大生产中的应用研究  

Study on Theory of the Edge-crowding Effect of Emitter Current in Bipolar Transistor and its Application to Mass Production

作　　者：石林初 杜行尧 吕文生 石一心 吴敏 肖志红 吴毅 

机构地区：[1]中国华晶电子集团公司,江苏无锡214061

出　　处：《微电子技术》2002年第1期1-8,共8页Microelectronic Technology

基　　金：国家自然科学基金资助项目 (批准号 :6 9776 0 2 4 )

摘　　要：本文对双极晶体管发射极电流集边效应的理论研究作了回顾。文章指出 :1971年 ,J Olmstead等人在四个假设下 ,导出了一维的描述该效应的微分方程 ,并给出了它的近似解。我们采用分离变量法 ,不作任何近似 ,导出了该微分方程的解析解 ,从而使描述该效应的理论得到了改进。该解析解理论用于射频功率晶体管的版图设计中 ,取得明显效益。解析解不仅提高了描述该效应的精度 ,更重要的 ,是拓宽了理论适用的范围 ,从弱注入到极强注入的所有注入范围内 ,它都能适用 。The study on the theory of the edge crowding effect of emitter current in a bipolar transistor is reviewed.It is pointed out that based on 4 assumptions,a one dimensional differential equation to describe the effect was set up by J.Olmstead et al in 1971,and its approximate solution was also given.The analytical solution is given by one of the authors with the so called 'method of dividing variables',without any approximation,so that the theory to describe the effect is improved.When applying the analytical solution to the layout of RF power transistor,tremendous profit is achieved.Not only to increase the precision of the theory but also to widen the suitable ranges of the theory;in the whole ranges from weak injection to extremely strong injection,the analytical solution is always suitable,and the distributed functions of base voltage and emitter current can be deduced by the analytical solution.

关 键 词：双极晶体管 发射极 电流集边效应 大生产 

分 类 号：TN322.8[电子电信—物理电子学]