MOS型硅功率器件的耐压与终端处理  

Breakdown Voltage and Termination Considerations for MOS Power Devices

作　　者：秦祖新[1] 刘三清[1] 

机构地区：[1]华中理工大学,武汉430074

出　　处：《微电子学》1991年第6期7-13,共7页Microelectronics

摘　　要：本文介绍了MOS型硅功率器件常见的平面结击穿电压的基本理论和提高击穿电压的基本方法以及终端处理技术发展中所面临的课题。Basic theory on the breakdown voltage of p-n junctions in MOS power devices is described in the paper. Techniques to improve breakdown voltage are introduced and problems concerning junction terminations are also discussed.

关 键 词：MOS技术 功率器件 集成电路 硅器件 

分 类 号：TN386.1[电子电信—物理电子学]