激光致溅射沉积Ge_2Sb_2Te_5薄膜的结晶行为研究  

Laser-induced Crystallization Behavior of the Sputtered Ge_2Sb_2Te_5 Film

作　　者：刘波[1] 阮昊[1] 干福熹[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《无机材料学报》2002年第3期637-640,共4页Journal of Inorganic Materials

基　　金：国家自然科学基金(59832060)

摘　　要：利用ＸＲＤ研究了激光致溅射沉积Ｇｅ２Ｓｂ２Ｔｅ５薄膜的结晶行为;研究发现,与热致相变不同的是,激光致相变只发生从非晶态到ＦＣＣ晶态结构的转变,从ＦＣＣ到ＨＣＰ的结构转变不再发生,这有利于提高相变光盘的信噪比．Ｇｅ２Ｓｂ２Ｔｅ５薄膜的结晶程度受初始化功率和转速的影响．The crystallization behavior of sputtered Ge2Sb2Te5 films initialized by initializer unit was studied by using XRD. It is indicated that only the amorphous phase to FCC phase transformation occurs during laser annealing of the normal phase-change structure, which is benefit for raising the phase-change optical disc's signal-to-noise ratio. The phase transformation from FCC to HCP doesn't occur, which occurs during the heat-induced phase-change process. The initialization power and velocity affect the Ge2Sb2Tes film's crystallization fraction.

关 键 词：激光致溅射沉积 GE2SB2TE5薄膜 结晶行为 激光致相变 X射线衍射 面心立方 光盘 相变光存储材料 

分 类 号：TQ594[化学工程—精细化工] O484[理学—固体物理]