在织构Ni衬底上用电子束蒸发沉积YSZ阻挡层  

GROWTH OF YSZ BUFFER LAYER ON CUBE-TEXTURED Ni

作　　者：杨坚[1] 宫声凯[2] 舒勇华[1] 刘慧舟[1] 胡广勇[1] 王晓华[1] 

机构地区：[1]北京有色金属研究总院超导中心,北京100088 [2]北京航空航天大学,北京100083

出　　处：《低温物理学报》2002年第2期92-95,共4页Low Temperature Physical Letters

基　　金：国家超导研究开发中心 (国家 863项目 );国家重点基础研究专项资助项目~~

摘　　要：用轧制及再结晶方法制备了高度立方织构的金属Ni(镍 )基带 .采用电子束蒸发的方法在几个厘米长的Ni基带表面上生长YSZ(钇稳定二氧化锆 )阻挡层 .X射线衍射分析表明 ,YSZ层具有纯c轴取向和良好的平面内取向及立方织构 .扫描电镜观察表明 ,YSZ阻挡层连续致密无裂纹 .The {100}\ cube textured metal Ni was obtained by cold rolling process followed by a recrystallization heat treatment. YSZ oxide buffer layer on textured Ni tape of a few centimeter long was deposited by electron beam evaporation. X ray diffraction was used to measure c axis , in plane orientation and pole figure. It showed that YSZ film was pure c axis alignment, a good in plane orientation and cubic texture. The result of SEM examination of the YSZ buffer layer microstructure was presented. No microcrack was observed.

关 键 词：Ni衬底 YSZ阻挡层 电子束蒸发沉积 薄膜生长 钇稳定二氧化锆 立方织构 金属镍衬底 超导材料 

分 类 号：O511.4[理学—低温物理]