用正电子湮没技术研究a-Si:H/a-SiN_x:H多层膜中的界面缺陷  

ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT

作　　者：王志超[1] 滕敏康[1] 刘吟春 

机构地区：[1]南京大学物理系,南京210008

出　　处：《物理学报》1991年第12期1973-1979,共7页Acta Physica Sinica

摘　　要：本文报道应用正电子湮没技术(PAT)对a-Si:H/a-SiNx:H(x≈0.5)多层膜系列样品所进行的研究。发现,由于a-Si:H和a-SiNx:H在结构方面的失配,导致在a-Si:H/a-SiNx:H多层膜中的界面区,产生大量缺陷。在a-Si:H子层中,紧靠界面的是应变层,厚度约为8;在应变层之后是过渡层,厚度约为50。在过渡层中存在大量缺陷,这就是所谓界面缺陷。A series of a-Si:H/a-SiNx.H(x=0.5) multilayers are studied by positron annihilation technique (PAT). It is found that a large number of defects are induced in the interface region of a-Si:H/a-SiNx:H multilayers, owing to the structure mismatch of a-Si:H and a-SiNx:H. In the a-Si:H sublayer, there is a strained layer close to the interface, its thickness is about 8A, and a transition layer above the strained layer, its thickness is about 50A. There are a large number of defects in the transition layer, they are called the 'interface defects'.

关 键 词：正电子湮没 半导体 多层膜 缺陷 

分 类 号：TN304.8[电子电信—物理电子学]