基于砷化镓材料的高功率超快光电导开关研究  

Research on High Power Ultra-fast Photoconductive Switch based on GaAs Material

作　　者：张显斌[1] 李琦[1] 田立强[1] 屈光辉[1] 施卫[1] 

机构地区：[1]西安理工大学自动化与信息工程学院,西安710048

出　　处：《高电压技术》2002年第5期40-42,共3页High Voltage Engineering

基　　金：国家自然科学基金资助项目 (批准号 :5 0 0 770 17)

摘　　要：简述了超快光电导开关的原理 ,分析了提高超快电脉冲时间特性的方法。通过辐照在 Ga As内部引入深能级陷阱 ,并用基于此种材料的光电导开关在实验中获得了上升时间 <2 0 0 ps的超快电脉冲波形。实验表明深能级的引入有利于开关对长波限激光脉冲的吸收。In this paper the principle of ultra-fast photoconductive switch is described and the method of improving the ultra-fast electric pulse is also discussed. Deep energy traps are introduced by particle beam irradiation in GaAs and a kind of photoconductive switch using these material is made. A current waveform with 200ps rise time is obtained by use of this switch. The experiment indicate that the deep energy trap is benefit to increase the ability of GaAs photoconductive switches absorbing long wavelength limit laser pulse obviously.

关 键 词：砷化镓材料 高功率超快光电导开关 光电器件 超快电脉冲 

分 类 号：TN36[电子电信—物理电子学]