立方氮化硼薄膜的制备与表征  

The Preparation and Characterization of Cubic Boron Nitride Thin Films

作　　者：谭俊[1] 蔡志海[2] 张平[1] 唐云[2] 

机构地区：[1]中国机械工程学会表面工程研究所,北京100072 [2]装甲兵工程学院材料系,北京100072

出　　处：《中国表面工程》2002年第2期16-20,共5页China Surface Engineering

基　　金：国家自然科学基金资助项目(59971065)

摘　　要：在对国内外立方氮化硼薄膜的制备工艺及其表征方法进行了综述的基础上,分析了立方氮化硼膜制备中存在的问题,即薄膜的内应力高,结合强度低,沉积温度高,沉积速率低,以及cBN中SP3键含量不稳定。并提出了今后的研究方向:①cBN膜成核生长机理问题;②低温下大面积、高速生长的异质外延和定向生长问题;③膜基结合问题;④发展新的成膜技术,寻求无毒无污染的反应材料;⑤开发cBN膜的应用。On the basis of reviewing the preparation technology, characterization method of c-BN thin films, we summarized the main problems in the researches of c-BN thin films, including high stress in the film , low adhesive strength, high deposition temperature, low deposition rate, and instability of the content of SP3 bond in cbn films. The authovs indicated that the further investigations should be focused on: ① the mechanisms of nuclei formation and growth of cbn films;② the heterogeneous extension and directional growth of large area at high growth rate and low temperature;③ the adhesion between the film and substrate;④ the new preparation technology without toxic and contaminative materials;⑤ the industrial application of cbn films.

关 键 词：立方氮化硼 薄膜 制备工艺 表征 PVD CVD 

分 类 号：TG174.444[金属学及工艺—金属表面处理]