晶体硅太阳电池的氮化硅表面钝化研究  

Investigation on Passivating Silicon Nitride Surface of Crystalline Silicon Solar Cells

作　　者：杨宏[1] 王鹤[1] 于化丛[2] 奚建平[2] 胡宏勋[2] 陈光德[1] 

机构地区：[1]西安交通大学理学院,西安710049 [2]上海交通大学太阳能研究所

出　　处：《西安交通大学学报》2002年第6期651-654,共4页Journal of Xi'an Jiaotong University

基　　金：西安交通大学博士学位论文基金资助项目

摘　　要：为了提高晶体硅太阳电池的光电转换效率 ,研究了用等离子增强化学气相沉积 (PECVD)的SiNx :H作为晶体硅太阳电池的表面钝化及减反射膜对电池性能的影响 ,并采用不同的工艺路线制备了不同类型的电池 .实验发现 :同SiNx :H比较 ,SiNx :H/SiO2 双层光学减反射结构对晶体硅太阳电池能起到更加有效的表面钝化作用 ,提高了太阳电池的光电转换效率 .基于界面物理 ,提出了一种新的能带模型 。In order to improve photoelectric conversion efficiency of crystalline silicon solar cells,some effects of surface passivation quality and antireflection properties of silicon nitride prepared by plasma enhanced chemical vapour deposition on crystalline silicon solar cells are investigated. All kinds of crystalline silicon solar cells were prepared by different process methods. It was found that the silicon nitride/silicon oxide double layer optical antireflection coatings structure shows excellent passivation properties for crystalline solar cells compared to silicon nitride, so photoelectric conversion efficiency of crystalline silicon solar cells is enhanced. Based on interface physics, a new energy band model of silicon nitride/silicon oxide/silicon is presented, differences of efficiency of crystalline silicon solar cells prepared by different methodes are explained by this model.

关 键 词：太阳电池 表面纯化 SINX H 等离子增强化学气相沉积 

分 类 号：TM914.4[电气工程—电力电子与电力传动]