微电子封装中FeCl_3蚀刻液沉淀失效及再恢复  

The Research on Deposition Failure and Regeneration of FeCl_3 Etchant in Microelectronics Packaging

作　　者：黄辉[1] 黄乐[1] 马莒生[1] 

机构地区：[1]清华大学材料系电子材料与封装实验室,北京100084

出　　处：《电子元件与材料》2002年第7期1-4,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(69836030)

摘　　要：在微电子封装中,多处要使用FeCl3溶液进行蚀刻,如PCB布线,细间距引线框架等。在实际湿法蚀刻的研究中,发现使用高玻美度的FeCl3溶液蚀刻效果好。而高玻美度溶液的低温结晶现象比低玻美度(40癇e)要明显得多,对科学研究和生产带来较大的不利。本文分析研究了FeCl3蚀刻液失效产物和产生机制,提出了失效的温度因素、杂质离子因素、时间因素的影响过程和再恢复的方法。FeCl3 etchant solution is commonly used for etch materials in microelectronics packages, such as wire layout in PCB, fine pitch lead frame. It has been reported that high Baume FeCl3 solution is fairly effective. However, crystallization at low temperature is more obvious when high Baume (48癇e) FeCl3 solution being used than low Baume (40癇e) solution. The deposition failure mechanism of FeCl3 solution is analyzed. How temperature, impurity ion, time, etc cause the failure is discussed and a generation approach is proposed.

关 键 词：微电子 封装 FeCl3蚀刻液 沉淀失效 恢复 氯化铁溶液 高玻美度 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]