a-Si:H/a-Si_(1-x)C_x:H 多层膜的电学和光学性质  

ELECTRICAL AND OPTICAL PROPERTIES OF a-Si:H/a-Si_(1-X)C_x:H MULTILAYERS

作　　者：彭启才[1] 周心明[1] 蔡伯埙 

机构地区：[1]四川大学

出　　处：《材料科学进展》1989年第1期65-70,共6页

摘　　要：采用等离子体辉光放电单室系统制备的 a-Si:H/a-Si_(1-x)C_x:H 多层膜结构具有低的暗电导和高的光电导特性,且不同于单层膜,有明显的 S-W 效应。随着子层厚度 L 减小,多层膜曝光态(B)的暗电导率σdB 较退火态(A)的σdA 减小快,即光诱导衰退程度增大,而光电导无明显变化。本文还测定了此多层膜结构的光能隙 E_g,得到随子层厚度减小“蓝移”的结果。用一维单量子阱模型作了讨论,实验值与理论计算符合较好。The a-Si:H/a-Si_(1-x)C_x:H multilayers synthesized by RFglow dischargedeposition in a single-chamber plasma reacter have shownlower darkconductivity,higher photoconductivity and apparent S-W effectother than unlayered samples.With decreasing the sublayer thickness L,thedark-conductivity of the multilayer samples after prolonged light exposure,σ_(dB),reduced more faster than that after annealing,σ_(dA),while photoconduetivityremains not appreciable change.In this paper,the optical gap E_(?) of a-Si:H/a-Si_(1-x)C_x:H multilayers have also been determined,the blue shift in theoptical gap was observed with decreasing sublayer thickness.Results werediscussed with one-dimension simple quantum-well model,which calculationvalues are quite well in agreement wtih measured vaues.

关 键 词：超晶格 非晶半导体 性质 

分 类 号：O472[理学—半导体物理]