异常掺杂引起的AlGaInP同型结结构  

The AlGaInP Homotype Junction Induced by Abnormal Doping

作　　者：周海龙[1] 黄柏标[1] 于永芹[1] 尉吉勇[1] 潘教青[1] 齐云[1] 陈文澜[1] 张晓阳[1] 秦晓燕[1] 任忠祥 李树强 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100 [2]山东华光光电子有限公司,山东济南250101

出　　处：《光电子．激光》2002年第6期578-580,共3页Journal of Optoelectronics·Laser

摘　　要：用电化学 C- V和 I- V特性分析的方法 ,对 Mg掺杂在 MOCVD生长 Al Ga In P发光二极管 (L ED)的影响进行了研究。通过电化学 C- V分析 ,确定了在生长结构中 Mg掺杂从有源层到 Ga P窗口层由高到低的情况 ;用 I- V特性分析的方法对器件结构进行了分析 ,发现了异常的实验结果。同时理论计算得到了同型结 (N+ - N,P+ - P)的势垒高度和空间电荷区的宽度 ,由此得到了在同型结两侧浓度比不同时的差异 ,极好的解释了异常的 I- V测试结果。The electrochemical C V profiler and the current voltage(I V) characteristics analysis was used to study the influence on doping Mg in AlGaInP with MOVCD growth.Through the electrochemical C V profile,we analysed the density of Mg in the AlGaInP growth structure,and used the I V characteristics to analyse the structure of the AlGaInP LED device,then found an abnormal result.From computing and theory analyzing the structure of the homotype junction (N + N,P + P),we got the height of the homotype junction barrier and the width of the space charge region,and analysed the doping density difference between both sides of the homotype junction.It excellently explained the abnormal I V characteristics result.

关 键 词：ALGAINP 发光二极管 掺杂 同型结 

分 类 号：TN312.8[电子电信—物理电子学]