SI-GaAs单晶中深能级陷阱退火特性研究  

Investigation on the annealed behavior of the deep level trap in LEC SI-GaAs

作　　者：谢自力[1] 

机构地区：[1]南京电子器件研究所,江苏南京210016

出　　处：《半导体技术》2002年第7期10-12,17,共4页Semiconductor Technology

摘　　要：研究了LEC-SI-GaAs单晶热处理前后深能级陷阱的变化,比较了原生晶体在不同条件的热退火后SI-GaAs单晶中深能级陷阱的特性,分析了产生变化的原因,并讨论了LEC-SI-GaAs中两个主要深能级陷阱EL2和EL6的可能构型。The annealed behaviors of the deep level trap in LEC SI-GaAs are investigated in thispaper. The changes of the deep level trap in SI-GaAs single crystal in different annealed conditionshave been compared. The reasons of the change have been analysis. The probably microscopic struc-tures of the two main deep level trap EL2 and EL6 in the LEC SI-GaAs are discussed.

关 键 词：深能级陷阱 退火特性 半绝缘砷化镓 热处理 光致电流瞬态谱 

分 类 号：TN304.23[电子电信—物理电子学]