微波退火法制备多晶硅薄膜的电学特性研究  

Study on Structure and Electrical Property of Polycrystalline Silicon Thin Film by Microwave Annealing

作　　者：饶瑞[1] 徐重阳[1] 曾祥斌[1] 王长安[1] 赵伯芳[1] 周雪梅[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《压电与声光》2002年第3期229-231,共3页Piezoelectrics & Acoustooptics

摘　　要：为实现多晶硅薄膜晶体管有源矩阵液晶显示器的实用化与产业化 ,低温 (<6 0 0°C)、快速制备高质量多晶硅薄膜已成为研究热点。文中将微波加热技术应用于金属诱导 a- Si薄膜横向晶化工艺中 ,成功实现了低温快速制备多晶硅薄膜。通过薄膜电阻率的测试 ,分析了多晶硅薄膜的电学特性。Preparation of polycrystalline silicon thin film rapidly at low temperature(<600 °C)become one of the hot spots,owing to the requirements of the practice and industry in active matrix liquid crystal display.In this paper,polycrystalline silicon thin film was rapidly prepared at low temperature by using the microwave heating in the metal induced lateral crystallization of a Si thin film.The electrical property of poly Si thin film has been studied by analyzing the resistivity of the thin film.

关 键 词：微波退火 低温晶化 多晶硅薄膜 电阻率 

分 类 号：TN304.055[电子电信—物理电子学]