以Al_2O_3为过渡层脉冲激光法制备PZT铁电薄膜  

Growth of high quality PZT thin film with Al_2O_3 buffer layer by pulsed laser deposition

作　　者：万青[1] 王连卫[1] 邢朔 章宁琳[1] 沈勤我[1] 林成鲁[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所

出　　处：《功能材料与器件学报》2002年第2期128-132,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(59982008)

摘　　要：为实现PZT铁电薄膜与半导体衬底的直接集成引入Al2O3为过渡层,首先用真空电子束蒸发法在Si(100)、多晶金刚石(111)衬底上生长约20nm厚的Al2O3过渡层,接着在上述衬底上采用脉冲激光淀积(PLD)法淀积PZT薄膜,衬底温度为350-550oC。X光电子能谱(XPS)测试表明,在高真空下,电子束蒸发Al2O3固态源能获得化学配比接近蒸发源的Al2O3薄膜。X射线衍射(XRD)测试说明,不论衬底是硅还是多晶金刚石,当衬底温度为550oC时,PZT在Al2O3过渡层上呈现(222)取向的焦绿石相结构。当衬底是金刚石时,通过如下工艺:(1)较低温度(350oC)淀积;(2)空气氛围650oC快速退火5min,可以在Al2O3过渡层上获得高度(101)取向的钙钛矿结构的铁电相PZT薄膜。最后AFM测试显示,在硅衬底上,PZT薄膜的表面均方根粗糙度为9.78nm;而在多晶金刚石衬底上,PZT薄膜的表面均方根粗糙度为17.2nm。In order to realize the integration of ferroelectric thin film and semic onductor substrate,Al 2 O 3 was used as buffer layer.First,Al 2 O 3 buffer layer was grown on Si (100),polycrystalline diamond(111)substrates with the thickness about 20nm by vacuum electron -beam evaporation method,then lead zirconate titanate(PZT)thin film was deposited on these substrates by pulsed laser deposition(PLD).XPS results suggest that at high vac uum ambient,stoichiometric Al 2 O 3 thin film can be obtained by the method of electron -beam vaporizing solid -state Al 2 O 3 source.XRD results show that when th e temperature is 550 o C,pyrochlore PZT film with(222)orientation can be obtained on both s ubstrates,and when substrate is diamond,highl y preferential(101)orientation perovskite PZT can be pr epared by the processes:(1)low -temperature(350 o C)deposition;(2)650 o C annealing for 5min in air ambient.AFM images show that the mean roughness of the PZT film is 9.8nm on silicon,and 17.2nm on dia -mond respectively.

关 键 词：脉冲激光法 制备 铁电薄膜 过渡层 PZT PLD 氧化铝 

分 类 号：TN304.9[电子电信—物理电子学]