半绝缘砷化镓的热激电流谱测量  

The measurement of thermally stimulated current in SI-GaAs

作　　者：王良[1] 郑庆瑜[1] 

机构地区：[1]天津电子材料研究所,天津300192

出　　处：《现代仪器》2002年第2期21-24,共4页Modern Instruments

摘　　要：本文介绍了热激电流谱(TSC)测试方法,测量了SI-GaAs材料的TSC特征谱图。并对SI-GaAs的深能级中心的行为进行了初步的分析。A introduction to the method of measuring thermally stimulated current (TSC) is presented. The method has been used to measure thermally stimulated current spectroscopy in SI-GaAs.The property of deel trap levels in SI-GaAs is analyzed preliminary.

关 键 词：半绝缘砷化镓 热激电流谱 EL2缺陷 

分 类 号：TN304.23[电子电信—物理电子学]