RF磁控溅射技术制备纳米硅  

Preparation nanometer Si clusters by RF magnetron sputtering tech nique

作　　者：马振昌[1] 宗婉华[1] 衡成林[2] 秦国刚[2] 吴正龙[3] 

机构地区：[1]河北半导体研究所,河北石家庄050051 [2]北京大学物理系,北京100871 [3]北京师范大学测试分析中心,北京100875

出　　处：《微纳电子技术》2002年第4期22-24,29,共4页Micronanoelectronic Technology

摘　　要：利用硅-SiO2复合靶,RF磁控溅射技术制备了三种富硅量不同的SiO2薄膜,并在较大的温度范围内进行了退火。利用x射线光电子能谱,对刚淀积的样品进行了分析,结果表明三种样品都存在纳米硅粒子。使用高分辨率透射电子显微镜和电子衍射技术研究了退火后样品中纳米硅粒子析出和结晶情况,富硅量较大的两种SiO2薄膜都观测到纳米硅晶粒。统计结果表明:复合靶中硅组分从20%增加到30%,纳米硅晶粒的平均尺寸增加了15%、密度增加了2.5倍,而且随着退火温度从900℃增加到1100℃,纳米硅晶粒的平均尺寸和密度都明显增加。Si-rich SiO 2 films with three different degrees of Si-richness were deposited by RF magnetron sputtering using Si-SiO 2 composite targets.x-ray photoelectron spectroscopy measurements indicate that Si clusters were presented in the as-deposited films.The precipitation and crystalliza-tion of nanometer Si clusters in SiO 2 films annealed at high temperatures have been studied using high-resolution transmission electron microscopy and electron diffraction.Si nanocrystallites were ob-served in the two samples with more degrees of Si-richness.The area percentage of Si in the com-posite target increased from20%to30%,the average size of Si nanocrystallites increased about 15%,and the density of Si nanocrystallites increased by a factor of2.5.The average size and density of Si nanocrystallites in the films increased notably as the annealing temperature was in-creased from900℃to1100℃.

关 键 词：磁控溅射 薄膜 射频 制备 纳米硅 

分 类 号：TN304.055[电子电信—物理电子学]