4H-SiC MESFET的特性研究  

Research on the properties of 4H-SiC MESFET

作　　者：徐昌发[1] 杨银堂[1] 朱磊[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《半导体技术》2002年第8期74-77,共4页Semiconductor Technology

基　　金：国家自然科学基金(69976023);教育部跨世纪优秀人才基金;国防科技预研基金资助项目

摘　　要：对4H-SiC MESFET的特性研究发现,在室温下4H-SiC MESFET饱和漏电流的值为0.75A/mm,随着温度的上升,器件的饱和漏电流和跨导一直下降;栅长越短,沟道层掺杂浓度越高,饱和漏电流就越大。300K时器件的击穿电压为209V,计算出来的最大功率密度可达19.22W/mm。这些结果显示了4H-SiC在高温、高压、大功率器件应用中的优势。The properties of 4H-SiC MESFET are researched. The saturation drain current of4H-SiC MESFET is 0.75A/mm at room temperature. The study results prove that with the increaseof temperature, the saturation drain current and the transconductance of 4H-SiC MESFET decrease.The shorter the gate length and the higher the channel doping concentration, the higher the satura-tion drain current. The breakdown voltage is 209V at the temperature of 300K and the calculatedmaximum power density is as high as 19.22W/mm indicating the advantage of 4H-SiC for hightemperature,high voltage and high power application.

关 键 词：MESFET 碳化硅 场效应器件 

分 类 号：TN386.3[电子电信—物理电子学]