源气体对沉积的a-C∶F∶H薄膜结构的影响  

The influence of different precursor gases on the as-deposited a-C∶F∶H films

作　　者：辛煜[1] 宁兆元[1] 程珊华[1] 陆新华[2] 江美福[1] 许圣华[1] 叶超[1] 黄松[1] 杜伟[1] 

机构地区：[1]苏州大学物理系,薄膜材料省重点实验室苏州215006 [2]苏州大学化学系,分析测试中心苏州215006

出　　处：《物理学报》2002年第8期1865-1869,共5页Acta Physica Sinica

基　　金：江苏省自然科学基金 (批准号 :0 0KJB43 0 0 0 1);国家自然科学基金 (批准号 :10 175 0 48)资助的课题~~

摘　　要：采用微波电子回旋共振等离子体化学气相沉积 (MWPECRCVD)方法 ,使用不同的源气体 (CHF3 CH4 ,CHF3 C2 H2 ,CHF3 C6 H6 )体系制备了a C∶F∶H薄膜 .由于CH4 ,C2 H2 ,C6 H6 气体在等离子体中的分解反应不同导致了薄膜的沉积速率和结构上的差异 .红外吸收谱的结果表明 ,用C6 H6 CHF3作为源气体沉积的薄膜中几乎不含H ,而用C2 H2 CHF3所沉积的薄膜中的含氟量最高 ,其相应的C F振动峰位向高频方向偏移 .薄膜的真空退火结果表明 ,a C∶F∶H薄膜的热稳定性除了取决于薄膜的CC键浓度外 ,还与CC键和其他键结构的关联有关 ,此外 ,源气体对薄膜的FBy altering source gases (CHF 3/CH 4, CHF 3/C 2H 2, CHF 3/C 6H 6), a C∶F∶H films were deposited with microwave plasma electron cyclotron resonance chemical vapor deposition (ECR CVD). Different dissociation mechanisms for CH 4, C 2H 2, C 6H 6 gases in the plasma lead to different deposition rates and structures in these a C∶F∶H films. The results of Fourier transform infrared spectra have shown that there is little H bonded in the films deposited with C 6H 6/CHF 3 precursor gases, while the highest fluorine content occurs in the films deposited with the precursor gases of C 2H 2/CHF 3, where the corresponding CF vibration band shifts to the high frequency side compared to that of other source gases. Thermal annealing for these films indicates that the thermal stability of a C∶F∶H films is dependent on CC bond concentration as well as correlation of CC bond with other bond configuration in the films. Additionally, the source gases have a great influence on the F/C atomic ratio and the relative dielectric constant of a C∶F∶H films.

关 键 词：源气体 a-C:F:H薄膜 结构 氟化非晶碳膜 电子回旋共振化学气相沉积 红外吸收光谱 

分 类 号：TN304.055[电子电信—物理电子学]