等离子体基脉冲偏压沉积DLC膜的氢分布和氢含量  

Distribution and Content of Hydrogen in DLC Films Prepared by Plasma Based Pulsed Bias Deposition

作　　者：夏立芳[1] 孙明仁[1] 

机构地区：[1]哈尔滨工业大学

出　　处：《无机材料学报》2002年第4期777-781,共5页Journal of Inorganic Materials

基　　金：高等学校博士学科点专项科研基金资助项目(9702132)

摘　　要：用核反应分析方法,对等离子体基脉冲偏压沉积DLC膜的氢分布和氢含量进行了较系统的研究.结果表明,用等离子体基脉冲偏压沉积技术可获得较低氢含量的DLC膜;其氢含量范围约为6at％～17at％,且氢沿膜厚是均匀分布的,随等离子体密度及离化率降低,DLC膜的氢含量增加,荷能离子对生长表面的轰击具有较强的析氢作用,工作气体中引入氢气促进DLC膜中氢的析出.The distribution and content of hydrogen in DLC films prepared by plasma based pulsed bias deposition were characterized systematically by nuclear reaction analysis (NRA). It was found that the DLC films with low hydrogen content can be obtained by plasma based bias deposition technique. The range of hydrogen content in DLC films is about 6at% to 17at%, and the hydrogen distribution is equalization along the depth of films. With decrease in plasma density and ionizability, the hydrogen contents in DLC films increase, however, the segregation of hydrogen in DLC films is promoted by hydrogen gas introduced into the working gas. The dehydrogenation is promoted obviously by the energetic ions bombardment on growth surface.

关 键 词：等离子体 脉冲偏压沉积 DLC膜 氢分布 氢含量 类金刚石膜 核反应分析 

分 类 号：O484[理学—固体物理] O613.71[理学—物理]