垂直结构ZnO薄膜晶体管制备与工作特性  

Preparation and Operation Characteristics of Vertical Structure Zinc Oxide Thin Film Transistor

作　　者：朱敏[1] 山岳 张月[1] 罗双超[1] 王东兴[1] 

机构地区：[1]哈尔滨理工大学教育部工程电介质重点实验室,黑龙江哈尔滨150080

出　　处：《哈尔滨理工大学学报》2014年第3期31-34,39,共5页Journal of Harbin University of Science and Technology

基　　金：黑龙江省教育厅科学技术研究项目(12511120)

摘　　要：针对目前发表的氧化物薄膜晶体管的研究成果中,存在着驱动电压高,工作电流小的问题,制备了垂直结构的氧化锌薄膜晶体管.器件制备是以石英玻璃为衬底,采用磁控溅射工艺,以氧化锌薄膜为有源层.测试结果表明,制备的晶体管驱动电压低、工作电流大、载流子迁移率高.在偏压条件VGS为0.2 V,VDS为3 V时,漏源极电流IDS达到9.15 mA,开启电压Vth仅在1.35 V左右,可以作为有机发光二极管的驱动单元,具备了实用化特性.Aiming at the current published research achievements of oxide thin film transistor,there are problems of high driving voltage and small operating current,we prepared the vertical structure of Zinc Oxide thin film transistor.Using quartz glass as substrate,Zinc Oxide as active layer,we prepared Zinc Oxide Thin Film Transistor device with magnetron sputtering.Measure results indicate that the thin film transistors show low driving voltage,large operating electric current and high mobility of charge carriers.In the condition of applying bias voltage,while the bias VGSis 0.2 V,VDSis 3 V,the drain could achieve at 9.15 mA,the open voltage Vthis only about 1.35 V,can be used as the drive unit of organic light emitting diode,have practical features.

关 键 词：氧化锌薄膜晶体管 低驱动电压 磁控溅射 载流子迁移率 

分 类 号：TN321.5[电子电信—物理电子学]