Nb/Nd共掺Bi_4Ti_3O_(12)对ZnO基薄膜晶体管性能的影响  

Effects of Nb/Nd codoped Bi_4Ti_3O_(12) on the performanace of ZnObased thin film transistors

作　　者：龚跃球[1] 刘奕帆[1] 阳歌 谢淑红[1] 

机构地区：[1]湘潭大学材料与光电物理学院,湖南湘潭411105

出　　处：《光电子．激光》2014年第7期1242-1247,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(11372268)资助项目

摘　　要：利用化学溶液沉积(CSD)法,在Pt/Ti/SiO2/Si(100)衬底上成功制备以B3.15Nd0.85Ti3-x NbxO12(BNTNx,x=0.01,0.03,0.05,0.07)薄膜作为栅介质层、以ZnO薄膜作为有源层的铁电薄膜晶体管(ZnO/BNTN铁电TFT)。研究了Nb含量对BNTN薄膜微结构、介电和铁电性能的影响。结果表明,BNTN0.03薄膜的剩余极化(2 Pr)最大(71.4μC/cm2),介电常数最大(370)。测得BNTNx薄膜的居里温度约为410℃,介电损耗(tanδ)约为0.02。ZnO/BNTN铁电TFT相比ZnO/SiO2层TFT,有较好的输出特性和转移特性,其阈值电压、沟道迁移率、存储窗口和开关电流比分别达到了2.5V、5.68cm2/Vs、1.5V和1.8×105。ZnO-based thin film transistors （ZnO -TFTs） were fabricated with Nb/Nd codoped Bi4Ti3O12 ferroeledctric thin film as gate dielectric layer.The B3.15Nd0.85Ti 3-xNbxO12 （BNTN x,x=0.01,0.03,5,0.07） thin film was prepared on Pt/Ti/SiO2/Si（100） substrate by chemical solution deposit ion method.The effects of Nb content on micro-structure,dielectric property and ferroelectricity of BNTNx f ilms have been studied.The BNTN0.03 film has the largest remanent polarization and dielectric constan t,which are 71.4μC/cm^2and 370, respectively.The measured Curie temperature of BNTNx f ilms is about 410℃ and the dielectric loss is around 0.02.ZnO/BNTN ferroelectric TFT,compared with ZnO/SiO2TFT,has superior outpu t characteristic and transfer characteristic.The values of threshold voltage,cha nnel mobility,memory window and current on/off ratio are 2.5V,5.68cm2/Vs,1.5V and 1.8×10^5,respectively.

关 键 词：B3 15Nd0 85 Ti3-xNbxO12(BNTNx) 铁电薄膜 ZnO薄膜晶体管(TFT) 

分 类 号：O472.4[理学—半导体物理]