一种石墨烯热电器件的圆片级制备工艺  

A Wafer-Level Fabrication Process of Graphene Thermoelectric Devices

作　　者：赵琦[1,2,3] 张扬熙 刘冠东[1,2] 高成臣[1,2] 郝一龙[1,2] 

机构地区：[1]北京大学微电子学研究院,北京100871 [2]北京大学深圳研究生院信息工程学院,广东深圳518055 [3]中国科学院传感技术国家重点实验室,北京100083

出　　处：《微纳电子技术》2014年第7期458-464,共7页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2012AA041201)

摘　　要：石墨烯器件的规模制备是石墨烯材料从实验室研究走向市场应用的关键技术。基于大面积化学气相淀积(CVD)石墨烯,结合微加工技术,对石墨烯圆片级制备工艺进行了初步研究。优化了光学光刻和反应离子刻蚀(RIE)等工艺参数,设计了一套适用于4英寸(1英寸=2.54 cm)硅衬底圆片级制备石墨烯器件的完整工艺流程,可以减少光刻次数,降低工艺成本。测试结果表明,单个圆片的器件成品率可达90.6%,圆片内器件具有较好的均一性,制备的石墨烯热电单元阵列在冷热端温差为5.2℃时,输出电压可达3.52 mV,高于已报道的同类石墨烯器件。The scale fabrication of graphene devices is a key technique that brings graphene from the laboratory to the market. Combining with the micro-fabrication technology, the preliminary research on the wafer-level fabrication of graphene based on the large area chemical vapor deposition （CVD） was made. The process parameters of the photolithography and reactive ion etching （RIE） were optimized. A complete process flow of the wafer-level fabrication of the graphene devices was designed for the four inches （1 inch = 2.54 cm） silicon wafer, which can reduce the number of photolithography and the cost of the process. The test results show that the device yield of a single wafer can reach 90.6 %, and the devices of a single wafer have good uniformity. When the temperature difference between the hot and cold sides of the thermoelectric cell arrays of graphene is 5.2 ℃, the output voltage is up to 3.52 mV, which is higher than that of the reported graphene devices.

关 键 词：石墨烯 化学气相淀积(CVD) 圆片级 微加工技术 热电器件 

分 类 号：TN304.18[电子电信—物理电子学]