新型碱性清洗剂对BTA去除的研究  

Study of a New Alkaline Cleaner for the Removal of BTA

作　　者：洪姣[1] 刘玉岭[1] 王辰伟[1] 苗英新 段波[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《微纳电子技术》2014年第7期470-474,共5页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)

摘　　要：为了有效去除化学机械抛光(CMP)后清洗中的苯并三氮唑(BTA)沾污,分析了碱性清洗剂中FA/OⅡ型螯合剂和FA/OⅠ型表面活性剂对BTA去除的影响规律。铜光片上的单因素实验中,通过测试铜光片清洗前后铜表面与去离子水的接触角得出:FA/OⅡ型螯合剂是影响铜光片上BTA去除的主要因素,FA/OⅠ型表面活性剂对铜光片上BTA的去除有一定的作用。利用扫描电镜测试采用不同体积分数和不同配比的清洗液清洗后的图形片上的BTA沾污,通过对比清洗后铜光片上残留的BTA沾污数量可知,清洗剂中FA/OⅡ型螯合剂体积分数为0.01%和FA/O I型表面活性剂体积分数为0.25%时,清洗剂清洗BTA沾污效果最好,基本上无BTA沾污残留,并且清洗后未发现氧化铜颗粒和硅溶胶颗粒沾污。In order to remove the benzotriazole （BTA） stain effectively in the post-CMP clea ning, the effect laws of FA/OⅡ chelating agent and FA/OⅠ surfactant in the alkaline cleaner on the removal of BTA were analyzed. In the single factor tests for the copper wafer, the contact angles between the deionized water and the surfaces of the copper wafers before and after cleaning were tested. Through the test, it is concluded that the FA/O Ⅱ chelating agent is the main factor influencing the removal of BTA on the copper wafer, and FA/O Ⅰ surfactant make some difference too. The BTA stain on the pattern wafer after cleaning with different volume fractions and different matching cleaning agents was tested by scanning electron microscopy （SEM）. By comparing the BTA residual quantities on the copper wafers after cleaning, it is known that when the volume fractions of the FA/OⅡ chelating agent and FA/OⅠsurfactant are respectively 0. 01% and 0.25 % in the detergent, the removal effect of BTA is best with almost no BTA residual, and the copper oxide particles and colloidal silica particles are not found after cleaning.

关 键 词：碱性清洗剂 螯合剂 表面活性剂 苯并三氮唑(BTA) 接触角 

分 类 号：TN305.2[电子电信—物理电子学]