基于混合曝光技术的新型亚微米图形制作方法  

A New Fabrication Method of the Sub-Micron Pattern Based on the Mixed Exposure Technology

作　　者：李淑萍[1] 林文魁[2] 王德稳[2] 周震华[2] 龚亚飞[2] 

机构地区：[1]苏州工业园区服务外包职业学院,江苏苏州215123 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《微纳电子技术》2014年第7期475-478,共4页Micronanoelectronic Technology

基　　金：江苏省高等职业院校高级访问工程师计划资助项目(2013-FG012)

摘　　要：提出了一种基于投影式光刻机和电子束光刻机混合曝光技术的新型亚微米图形制作方法,该方法可用于制作对精度要求比较高的亚微米图形。具体的做法是将亚微米图形分解成高精度图层和普通精度图层,并将两个图层分别采用电子束直写和投影式光刻机依次在同一层光刻胶曝光后,经过一次显影得到完整图形。通过该方法不仅可以大幅减少采用电子束直写亚微米图形所需的时间,还可以有效地保证图形的线宽精度。从图形的数据处理和实验制作两个方面,详细地介绍了采用该方法在硅衬底上制作SU-8亚微米图形的过程。经SEM测试得出,本方法制作的图形尺寸精度和棱角的锐度都非常精确,可比较理想地实现设计者的设计要求。Based on the mixed exposure technology of the projection lithography system and elec tron beam lithography system, a new fabrication method was presented for making high precision submicron pattern. The submicron pattern was divided into high precision one and low precision one, then the two patterns were respectively exposed by electron beam lithography system and projection lithography system on the same layer of the photo resist in proper order, and the whole pattern was obtained after a development. The method can greatly reduce the time of the electron beam directwrite and effectively assure the linewidth precision of the pattern. From two aspects of data processing and experiment, the fabrication process of the SU 8 submicron pattern on the silicon substrate by the method was introduced. The SEM test result shows that the method can fabricate the SU 8 pattern with very high size precision and angle acutance, and ideally realize the design requirements of the designers.

关 键 词：混合曝光技术 亚微米图形 电子束曝光 投影式光刻 SU-8 

分 类 号：TN305.7[电子电信—物理电子学]