固态平板Blumlein线中的GaAs光导开关导通电阻实验  

Experiment on GaAs PCSS's on-resistance with solid-state planar Blumlein line

作　　者：谌怡[1] 王卫[1] 刘毅[1] 夏连胜[1] 张篁[1] 朱隽[1] 石金水[1] 章林文[1] 

机构地区：[1]中国工程物理研究院流体物理研究所脉冲功率科学与技术重点实验室,四川绵阳621900

出　　处：《电工电能新技术》2014年第7期73-76,共4页Advanced Technology of Electrical Engineering and Energy

基　　金：国家自然科学重点基金资助项目(11035004);中物院科学技术发展重点基金资助项目(2013A0402018)

摘　　要：为了研制紧凑型脉冲功率系统,开展了基于固态Blumlein线的GaAs光导开关(PCSS)导通电阻的初步研究实验。结合2mm厚固态平板Blumlein线,利用高功率脉冲激光二极管触发GaAs光导开关,在脉冲偏置电压下,GaAs光导开关非线性导通,经Blumlein线输出22.3 kV高压脉冲至负载,满足紧凑型脉冲功率系统的设计要求。通过偏置电压、输出电压以及Blumlein线阻抗估算光导开关的导通电阻约4.1Ω。另外,研究了GaAs光导开关非线性导通模式下的导通电阻与偏置电压和激光能量的关系。In order to develop the compact pulse power system, the experiment on GaAs photoconductive semiconductor switch （PCSS） ＇s on-resistance has been studied. With 2mm-thick solid-state planar Blumlein line, GaAs PCSS is triggered with the high power pulse laser diode. GaAs PCSS turned-on the lock-on mode under the pulsed bias voltage. A 22.3kV high voltage pulse was obtained on load through Blumlein line, which satisfied the design of compact pulse power system. The PCSS＇ s on-resistance of 4. 1Ω was calculated according to bias voltage, output voltage and impedance of Blumlein line. Moreover, the relationship between GaAs PCSS＇ s on-resistance and bias voltage, laser energy were studied under the lock-on mode of PCSS.

关 键 词：脉冲功率技术 固态平板Blumlein线 GAAS光导开关 导通电阻 

分 类 号：TN78[电子电信—电路与系统]