电子封装用Al／SiC材料制备技术及发展趋势  

Fabrication Technology and Trends of Al/SiC Material for Electronic Packaging

作　　者：张玉君[1] 杨磊[1] 

机构地区：[1]中国电子科技集团公司第43研究所,合肥230088

出　　处：《混合微电子技术》2013年第3期48-51,共4页Hybrid Microelectronics Technology

摘　　要：Al／SiC复合材料作为第三代封装材料典型代表，具有热导率高、膨胀系数低、强度高、密度低、导电理想等优点，正被越来越多研究者关注。本文将Al/SiC材料性能与其它常用封装材料进行了比较；详细介绍了目前电子封装用Al／SiC材料制备技术及原理；分析了各种制备方法的优缺点；对比了气体压力熔渗法与无压熔渗法制备差异；从降低材料生产成本、满足批量生产等方面出发，得出了无压熔渗法是当前及今后生产电子封装用Al／SiC材料的有效方法。Al/SiC composite material as a typical representative of the third generationpackaging materials, featured with high thermal conductivity,low CTE, low density, high strength and ideal conductivity is being concerned recently by more and more engineers. Al/SiC material properties and other common packaging materials are compared in this paper. And the fabrication and principles of AlSiC for current electronic packaging are described in detail. The advantages and disadvantages of various preparation methods are analyzed. It also indicated differences between pressure infiltration fabrication and pressureless infiltration fabrication. It is concluded that the pressureless infiltration method is the prevailing effective way in producing Al/SiC material in terms of decreasing production cost and meeting the requirements of mass production.

关 键 词：AL/SIC 制备技术 原理 优缺点 无压熔渗法 

分 类 号：TN604[电子电信—电路与系统]