石墨烯场效应晶体管的光响应特性研究  

Studies on the Photoresponse in Graphene-Based Field-Effect Transistors

作　　者：魏子钧[1] 王志刚[2] 李晨[1] 郭剑[1] 任黎明[1] 张朝晖[2] 傅云义[1] 黄如[1] 

机构地区：[1]北京大学微电子学研究院,北京100871 [2]北京大学物理学院人工微结构与介观物理国家重点实验室,北京100871

出　　处：《北京大学学报（自然科学版）》2014年第4期704-708,共5页Acta Scientiarum Naturalium Universitatis Pekinensis

基　　金：国家科技重大专项(2011ZX02707-2);高等学校博士学科点专项科研基金(20130001110024)资助

摘　　要：采用电子束曝光和剥离工艺制备石墨烯场效应晶体管,并研究其光电响应特性。结果表明,当激光光斑(波长为633 nm)照射在金属电极边缘的石墨烯沟道时,可测得明显的光电流。背栅电压能够有效调制光电响应,可以改变光电流的大小和方向。在背栅调控下,光电流出现饱和现象,石墨烯晶体管的光响应度最大达到46.5μA/W,可用于构建基于石墨烯的新型光探测器。Graphene-based field-effect transistors （FETs） were fabricated by electron beam lithography and lift- off process and the photoresponse in the transistor was investigated. Significant photocurrents can be detected when the channel graphene near the metal contact is illuminated by a laser spot （λ = 633 nm）. Both the magnitude and direction of the photocurrent can be effectively modulated by the back-gate voltage. In addition, the photocurrent will saturate by increasing the gate voltage. A maximum responsivity of 46.5 μA/W is achieved, which can be contributed to develnn the novel graphene-based photodetectors.

关 键 词：石墨烯场效应晶体管 光电响应 背栅调制 

分 类 号：TN386[电子电信—物理电子学]