热处理气氛对电子辐照直拉硅中氧沉淀的影响  

Effect of Annealing Atmosphere on Oxygen Precipitation in Electron Irradiated Czochralski Silicon

作　　者：蔡莉莉[1] 冯翠菊[1] 陈贵锋[2] 

机构地区：[1]华北科技学院基础部物理教研室,北京101601 [2]河北工业大学材料科学与工程学院,天津300130

出　　处：《硅酸盐通报》2014年第7期1802-1805,共4页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(50872028);河北省教育厅科技项目(Z2013024);中央高校基本科研业务费(JCB2013B09)

摘　　要：对经过电子辐照的n型[111]晶向直拉硅样品在不同气氛下进行了热处理,对比研究了热处理气氛对电子辐照直拉硅中的缺陷形貌、间隙氧含量的变化以及清洁区的影响。实验结果表明,热处理气氛对辐照样品中的缺陷形貌影响较大:氩气氛下退火样品体内的缺陷以位错环为主而氮气氛下则主要是层错,并对此现象的机理进行了讨论;经历不同气氛快速预处理再进行高温一步退火后,辐照样品表面会产生一定宽度的清洁区,而氮气氛下清洁区宽度较窄;通过傅里叶变换红外光谱仪检测间隙氧含量的变化发现氮气氛下退火的样品间隙氧含量下降较多,说明氮气氛热处理更有利于氧沉淀的生成。The n-type [ I! l ] crystal Czochralski silicon （CZ-Si） samples were subjected to electron irradiation and heat treatment in different atmosphere. The effect of annealing atmosphere on the defect morphology, interstitial oxygen content and denuded zone in electron irradiated CZ-Si was investigated. It shows that annealing atmosphere is a great influence on the defect morphology. The dislocation loops appear in the samples annealed in argon atmosphere while defects are mainly stacking faults in the samples annealed in nitrogen atmosphere. The mechanism of this phenomenon is discussed. In addition, the denuded zone （DZ） can be formed in samples subjected to RTP followed by conventional annealing in argon and nitrogen atmosphere. The width of DZ was narrower in nitrogen atmosphere annealing. Furthermore, the interstitial oxygen concentration decreases more in nitrogen atmosphere annealing. This shows that nitrogen atmosphere annealing could be beneficial for oxygen precipitation.

关 键 词：电子辐照 氧沉淀 缺陷形貌 快速热处理(RTP) 清洁区(DZ) 

分 类 号：TN305[电子电信—物理电子学]